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Nowadays, Si is mainly used for solar cells. However,
Si-related solar cells have several problems such as high cost,
limited material, complex manufacturing process, and so on. For the
21st century, solar cells are required for high conversion
efficiency, low-cost, lightweight, and radiation-resistance.
CuIn1-xGaxSe2 (CIGS) alloy
semiconductors have attracted attention as a promising candidate for
use in light-absorbing media.
In our laboratory, we have been studied
crystal growth and characterization of several materials for solar
cells. Now, we are studying (1) chalcopyrite
materials CIGS film for solar cells, (1') Earth abandant
materials used photoabsorber such as SnS, Cu2SnS3, NiO
growth, (2) transparent
conducting oxide (TCO) film for flat displays and solar
cells, and (3) the
fabrication of pn-junction for solar cells.
Even though researchers have made extraordinary progress
over the years, and improved performance, lower costs and
reliability still remain as major considerations and challenges. We
are striving to produce a uniform single phase absorber layer and a
window layer with better optoelectronic properties which together
will increase the efficiency of solar cell devices. The ultimate
goal of the project is transferring laboratory achievements to the
commercial production line which will have a substantial impact on
the scientific world and technology.
We collaborate with Prof. S.F.Chichibu (Tohoku Univ.),
Prof. T. Nakada (Tokyo Univ. Sci.), Prof. K.T.R.Reddy (Sri
Venkateswara Univ., India), Prof. S.Shirakata (Ehime Univ.), for
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